| PART |
Description |
Maker |
| APT36N90BC3G |
Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| TMP96C141B |
16-Bit Microcontroller TLCS-900 Family: 900 Series
|
Toshiba
|
| TMP93PW76 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| 2SK1984-01MR |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK1943-01 |
OSC 5V 8PIN CMOS 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| FQP6N90C FQPF6N90CT |
N-Channel QFET? MOSFET 900 V, 6.0 A, 2.3 Ω
|
Fairchild Semiconductor
|
| FQA11N90-F109 FQA11N90F109 |
N-Channel QFET? MOSFET 900 V, 11.4 A, 960 mΩ
|
Fairchild Semiconductor
|
| FQA11N90C-F109 |
FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11 A, 1.1 Ohm
|
Fairchild Semiconductor
|
| IRFBF20PBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| IPW90R120C3 |
36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
| 3N90L-TQ2-R 3N90L-TQ2-T 3N90L-TA3-T 3N90G-TA3-T 3N |
3 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| FCD900N60ZCT-ND |
FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mΩ
|
Fairchild Semiconductor
|
|
